IRG4BC20SD-S insulated gate bipolar transistor with ultrafast soft recovery diode features features features features features e g n-channel c v ces = 600v v ce(on) typ. = 1.4v @v ge = 15v, i c = 10a standard speed igbt benefits pd -91794 parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 19 i c @ t c = 100c continuous collector current 10 i cm pulsed collector current ? 38 a i lm clamped inductive load current ? 38 i f @ t c = 100c diode continuous forward current 7.0 i fm diode maximum forward current 38 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 60 p d @ t c = 100c maximum power dissipation 24 t j operating junction and -55 to +150 t stg storage temperature range c absolute maximum ratings w www.irf.com 1 2 d pak ? extremely low voltage drop 1.4vtyp. @ 10a ? s-series: minimizes power dissipation at up to 3 khz pwm frequency in inverter drives, up to 4 khz in brushless dc drives. ? very tight vce(on) distribution ? igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations ? industry standard d 2 pak package ? generation 4 igbt's offer highest efficiencies available ? igbt's optimized for specific application conditions ? hexfred diodes optimized for performance with igbt's . minimized recovery characteristics require less/no snubbing ? lower losses than mosfet's conduction and diode losses parameter typ. max. units r q jc junction-to-case - igbt CCC 2.1 r q jc junction-to-case - diode CCC 3.5 c/w r q ja junction-to-ambient ( pcb mounted,steady-state)* CCC 80 wt weight 1.44 CCC g (oz) thermal resistance * when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994.
IRG4BC20SD-S 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) 27 40 i c = 10a qge gate - emitter charge (turn-on) 4.3 6.5 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) 10 15 v ge = 15v t d(on) turn-on delay time 62 t j = 25c t r rise time 32 ns i c = 10a, v cc = 480v t d(off) turn-off delay time 690 1040 v ge = 15v, r g = 50 w t f fall time 480 730 energy losses include "tail" and e on turn-on switching loss 0.32 diode reverse recovery. e off turn-off switching loss 2.58 mj see fig. 9, 10, 11,18 e ts total switching loss 2.90 4.5 t d(on) turn-on delay time 64 t j = 150c, see fig. 10,11, 18 t r rise time 35 ns i c = 10a, v cc = 480v t d(off) turn-off delay time 980 v ge = 15v, r g = 50 w t f fall time 800 energy losses include "tail" and e ts total switching loss 4.33 mj diode reverse recovery. l e internal emitter inductance 7.5 nh measured 5mm from package c ies input capacitance 550 v ge = 0v c oes output capacitance 39 pf v cc = 30v see fig. 7 c res reverse transfer capacitance 7.1 ? = 1.0mhz t rr diode reverse recovery time 37 55 ns t j = 25c see fig. 5590 t j = 125c 14 i f = 8.0a i rr diode peak reverse recovery current 3.5 5.0 a t j = 25c see fig. 4.5 8.0 t j = 125c 15 v r = 200v q rr diode reverse recovery charge 65 138 nc t j = 25c see fig. 124 360 t j = 125c 16 di/dt = 200as di (rec)m /dt diode peak rate of fall of recovery 240 a/s t j = 25c see fig. during t b 210 t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage? 600 v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage 0.75 v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage 1.40 1.6 i c = 10a v ge = 15v 1.85 v i c = 19a see fig. 2, 5 1.44 i c = 10a, t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage -11 mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 2.0 5.8 s v ce = 100v, i c = 10a i ces zero gate voltage collector current 250 a v ge = 0v, v ce = 600v 1700 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop 1.4 1.7 v i c = 8.0a see fig. 13 1.3 1.6 i c = 8.0a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
IRG4BC20SD-S www.irf.com 3 0.1 1 10 100 0.0 1.0 2.0 3.0 f, frequency (khz) load current (a) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 60% of rated voltage i ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 1.7 1 10 100 5 6 7 8 9 10 11 12 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 150 c j o 1 10 100 0.0 1.0 2.0 3.0 4.0 v , collector-to-emitter voltage (v) i , collector current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j
IRG4BC20SD-S 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 5 c i = a 10 c i = a 20 c 5.0 a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
IRG4BC20SD-S www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = v = 15v v = 480v g ge cc i = a 20 c i = a 10 c i = a 5 c 0 10 20 30 40 50 2.7 2.8 2.9 3.0 r , gate resistance total switching losses (mj) g v = 480v v = 15v t = 25 c i = 10a cc ge j c fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 5 10 15 20 25 30 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 10a cc c 1 10 100 0 200 400 600 800 1000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 50 w r g , gate resistance ( w )
IRG4BC20SD-S 6 www.irf.com 0 4 8 12 16 20 0 2 4 6 8 10 12 14 i , collector current (a) total switching losses (mj) c r = t = 150 c v = 480v v = 15v g j cc ge fig. 13 - maximum forward voltage drop vs. instantaneous forward current 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 fm f instantaneous forward current - i (a) forward volta g e drop - v (v) t = 150c t = 125c t = 25c j j j fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 1 10 100 1 10 100 1000 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area 50 w
IRG4BC20SD-S www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 100 200 300 400 500 100 1000 f di /dt - (a/s) rr q - (nc) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 0 20 40 60 80 100 100 1000 f di /dt - (a/s) t - (ns) rr i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j
IRG4BC20SD-S 8 www.irf.com same t y pe device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +v g 10% +v g 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vd ic dt vce ic dt ic dt t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge
IRG4BC20SD-S www.irf.com 9 v g gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 2 x i c @25c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
IRG4BC20SD-S 10 www.irf.com notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) ? v cc =80 %( v ces ), v ge =20v, l=10h, r g = 50 w (figure 19) ? pulse width 80s; duty factor 0.1% . ? pulse width 5.0s, single shot. 10.16 (.400) ref. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r ef. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m a x. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - g ate 2 - d rain 3 - so u rc e 2.54 (.100) 2x d 2 pak package outline world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 9/98
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